05B00006 With NSN 5961-01-061-2045 by Hekimian Laboratories Inc - Submit Details

Mfg Part Number: 05B00006 NSN : 5961-01-061-2045 NIIN : 010612045
CAGE Code : 50319 Manufacturer: Hekimian Laboratories Inc Item Name : Transistor
FSC : 5961 Semiconductor Devices and Associated Hardware

Thank you for your interest in NSN Part 05B00006 under NSN 5961-01-061-2045 with 010612045 featured on After Market Aero Spares. On this page, entities may request a quote for their comparisons on Transistor items by Hekimian Laboratories Inc with the CAGE Code 50319  or begin the purchasing process through the submission of a completed RFQ form. This entails providing details regarding one’s desired part quantities, target prices, estimated shipping time frames, and more, as applicable. Upon submitting a completed form for NSN Part 05B00006 with 5961 Semiconductor Devices and Associated Hardware our representatives will utilize their market prowess to supply you with a personalized quote backed by rapid lead times and cost savings in just 15 minutes or less.

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NSN Information for Part Number 05B00006 with NSN 5961-01-061-2045, 5961010612045

NSNFSCNIINCLSHazmatDEMILCancelled NSN
5961-01-061-2045

Item Description:

TRANSISTOR

59610106120450NA
CIICHCCESDPMICCriticalityENAC
UAA0
Part NumberISCRNVCRNCCHCCMSDSSADC
MM5005593

Characteristics Data of NSN 5961-01-061-2045, 5961010612045

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH51.050 MILLIMETERS MAXIMUM"
ABJTTERMINAL LENGTH6.600 MILLIMETERS MAXIMUM"
ADAVOVERALL DIAMETER0.315 INCHES MINIMUM AND 0.335 INCHES MAXIMUM"
AKPVMOUNTING FACILITY QUANTITY4"
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-39"
AXGYMOUNTING METHODTERMINAL"
AYQSTERMINAL CIRCLE DIAMETER9.390 MILLIMETERS MAXIMUM"
CTMZIII SEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN"
CTQXCURRENT RATING PER CHARACTERISTIC2.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK"
CTRDPOWER RATING PER CHARACTERISTIC8.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT-55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE"
FEATSPECIAL FEATURESLOW FREQUENCY POWER SILICON PNP BJT"
TTQYTERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD"
ABBHINCLOSURE MATERIALGLASS"
ABHPOVERALL LENGTH51.050 MILLIMETERS MAXIMUM"
ABJTTERMINAL LENGTH6.600 MILLIMETERS MAXIMUM"
ADAVOVERALL DIAMETER0.315 INCHES MINIMUM AND 0.335 INCHES MAXIMUM"
AKPVMOUNTING FACILITY QUANTITY4"
ALAZJOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATIONT0-39"
AXGYMOUNTING METHODTERMINAL"
AYQSTERMINAL CIRCLE DIAMETER9.390 MILLIMETERS MAXIMUM"
CTMZIII SEMICONDUCTOR MATERIALSILICON"
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND 80.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN"
CTQXCURRENT RATING PER CHARACTERISTIC2.00 MILLIAMPERES ZERO-GATE-VOLTAGE SOURCE CURRENT BLANK"
CTRDPOWER RATING PER CHARACTERISTIC8.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-EMITTER ABSOLUTE"
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT-55.0 DEG CELSIUS CASE AND 175.0 DEG CELSIUS CASE"
FEATSPECIAL FEATURESLOW FREQUENCY POWER SILICON PNP BJT"
TTQYTERMINAL TYPE AND QUANTITY4 UNINSULATED WIRE LEAD"

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