| Mfg Part Number: AM9114BDC | NSN : 5962-01-138-3379 | NIIN : 011383379 |
| CAGE Code : 34335 | Manufacturer: Advanced Micro Devices Inc | Item Name : Microcircuit Memory |
| FSC : 5962 Microcircuits Electronic |
Thank you for your interest in NSN Part AM9114BDC under NSN 5962-01-138-3379 with 011383379 featured on After Market Aero Spares. On this page, entities may request a quote for their comparisons on Microcircuit Memory items by Advanced Micro Devices Inc with the CAGE Code 34335 or begin the purchasing process through the submission of a completed RFQ form. This entails providing details regarding one’s desired part quantities, target prices, estimated shipping time frames, and more, as applicable. Upon submitting a completed form for NSN Part AM9114BDC with 5962 Microcircuits Electronic our representatives will utilize their market prowess to supply you with a personalized quote backed by rapid lead times and cost savings in just 15 minutes or less.
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| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-138-3379 Item Description: MICROCIRCUIT,MEMORY | 5962 | 011383379 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| 7 | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 2114L | 3 | 1 | 5 |
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -0.0/+70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
| ADAQ | BODY LENGTH | 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM" |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM" |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM" |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS" |
| AFGA | OPERATING TEMP RANGE | -0.0/+70.0 DEG CELSIUS" |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS" |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT" |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS" |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE" |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC" |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT" |
| CRHL | UNABLE TO DECODE | UNABLE TO DECODE" |
| CSWJ | UNABLE TO DECODE | UNABLE TO DECODE" |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER" |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE" |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT" |
| CZER | MEMORY DEVICE TYPE | ROM" |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT" |
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